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SI7901EDN - 4.3 A, 20 V, 0.048 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET From old datasheet system Dual P-Channel 20-V (D-S) MOSFET

SI7901EDN_1077676.PDF Datasheet

Part No.

SI7901EDN SI7901EDN-E3

Description

4.3 A, 20 V, 0.048 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
From old datasheet system
Dual P-Channel 20-V (D-S) MOSFET

File Size

40.73K / 5 Page

Maker

Vishay Siliconix

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Part: SI7901EDN-T1

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Full text search : 4.3 A, 20 V, 0.048 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET From old datasheet system Dual P-Channel 20-V (D-S) MOSFET

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FF75R10KN FF150R10KN FF100R10KN FS50R10KF2 FS8R06K	TRANSISTOR \| IGBT \| N-CHAN \| DUAL \| 1KV V(BR)CES \| 75A I(C) \| M:HL093HD5.6 TRANSISTOR \| IGBT \| N-CHAN \| DUAL \| 1KV V(BR)CES \| 150A I(C) \| M:HL093HW048 TRANSISTOR \| IGBT \| N-CHAN \| DUAL \| 1KV V(BR)CES \| 100A I(C) \| M:HL093HW048 TRANSISTOR \| IGBT POWER MODULE \| 3-PH BRIDGE \| 1KV V(BR)CES \| 50A I(C) TRANSISTOR \| IGBT POWER MODULE \| 3-PH BRIDGE \| 600V V(BR)CES \| 8A I(C) 晶体管\| IGBT功率模块\| 3 - PH值大桥\| 600V的五（巴西）国际消费电子展\| 8A条一（c TRANSISTOR \| IGBT \| N-CHAN \| DUAL \| 1KV V(BR)CES \| 15A I(C) \| M:HL080HD5.3 晶体管\| IGBT的\|正陈\|双\| 1KV交五（巴西）国际消费电子展\|5A一（c）\|米：HL080HD5.3 TRANSISTOR \| IGBT POWER MODULE \| 3-PH BRIDGE \| 600V V(BR)CES \| 75A I(C) 晶体管\| IGBT功率模块\| 3 - PH值大桥\| 600V的五（巴西）国际消费电子展\| 75A条一（c	Delta Electronics, Inc. Fuji Electric Holdings Co., Ltd. Infineon Technologies AG

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